Related content

1.4 kV 4H-SiC PiN diode with a robust non-uniform floating guard ring termination

By Sizhe Chen   Kuang Sheng   Jue Wang  

Journal of Semiconductors, Vol. 35, Iss. 5, 2014-05 ,pp. : 54003-54006

IOP Publishing

Access to resources Recommend Favorite

Design and fabrication of a 3.3 kV 4H-SiC MOSFET

By Runhua Huang   Yonghong Tao   Song Bai   Gang Chen   Ling Wang   Ao Liu   Neng Wei   Yun Li   Zhifei Zhao  

Journal of Semiconductors, Vol. 36, Iss. 9, 2015-09 ,pp. : 94002-94005

IOP Publishing

Access to resources Recommend Favorite

High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristor

By Rumyantsev S.L.   Levinshtein M.E.   Shur M.S.   Cheng L.   Agarwal A.K.   Palmour J.W.  

Semiconductor Science and Technology, Vol. 28, Iss. 4, 2013-04 ,pp. : 45016-45018

IOP Publishing

Access to resources Recommend Favorite

Holding current and switch-on mechanisms in 12 kV, 100 A 4H-SiC optically triggered thyristors

By Levinshtein M E   Rumyantsev S L   Shur M S   Mnatsakanov T T   Yurkov S N   Zhang Q J   Agarwal A K   Cheng L   Palmour J W  

Semiconductor Science and Technology, Vol. 28, Iss. 1, 2013-01 ,pp. : 15008-15012

IOP Publishing

Access to resources Recommend Favorite

Optical triggering of 12 kV, 100 A 4H-SiC thyristors

By Rumyantsev S L   Levinshtein M E   Shur M S   Saxena T   Zhang Q J   Agarwal A K   Palmour J W  

Semiconductor Science and Technology, Vol. 27, Iss. 1, 2012-01 ,pp. : 15012-15015

IOP Publishing

Access to resources Recommend Favorite