Related content

Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates

By Reddy M.  

Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. : 1706-1716

Springer Publishing Company

Access to resources Recommend Favorite

In situ control of gan growth by molecular beam epitaxy

By Held R.   Crawford D.   Johnston A.   Dabiran A.   Cohen P.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 272-280

Springer Publishing Company

Access to resources Recommend Favorite

Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy

By Sánchez-García M.   Calleja E.   Sanchez F.   Calle F.   Monroy E.   Basak D.   Muñoz E.   Villar C.   Sanz-Hervas A.   Aguilar M.   Serrano J.   Blanco J.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 276-281

Springer Publishing Company

Access to resources Recommend Favorite

Oxygen Incorporation in ZnTeO Alloys via Molecular Beam Epitaxy

By Zhou Li   Chen Chihyu   Jia Hongfei   Ling Chen   Banerjee Debasish   Phillips Jamie   Wang Yongqiang  

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 889-893

Springer Publishing Company

Access to resources Recommend Favorite

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

By Mackenzie J.   Abbaschian L.   Abernathy C.   Donovan S.   Pearton S.   Chow P.   Hove J.  

Journal of Electronic Materials, Vol. 26, Iss. 11, 1997-11 ,pp. : 1266-1269

Springer Publishing Company

Access to resources Recommend Favorite