AlN thin films prepared by ArF plasma assisted PLD. Role of process conditions on electronic and chemical–morphological properties

Author： Cappelli E. Trucchi D. Orlando S. Valentini V. Mezzi A. Kaciulis S.

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.114, Iss.2, 2014-02, pp. : 611-617

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Phase transition and properties of Ti-Al-N thin films prepared by r.f.-plasma assisted magnetron sputtering

By Zhou M. Makino Y. Nose M. Nogi K.

Thin Solid Films, Vol. 339, Iss. 1, 1999-02 ,pp. : 203-208

Elsevier

Access to resources Recommend Favorite

Electronic properties of PLD prepared nitrogenated a-SiC thin films

By Barreca F. Fazio E. Neri F. Trusso S.

Thin Solid Films, Vol. 433, Iss. 1, 2003-06 ,pp. : 34-38

Elsevier

Access to resources Recommend Favorite

Optical properties of AlN thin films correlated with sputtering conditions

By Gadenne M. Plon J. Gadenne P.

Thin Solid Films, Vol. 333, Iss. 1, 1998-11 ,pp. : 251-255

Elsevier

Access to resources Recommend Favorite

AlN thin films prepared by ion beam induced chemical vapour deposition

By Sanchez-Lopez J.C. Contreras L. Fernandez A. Gonzalez-Elipe A.R. Martin J.M. Vacher B.

Thin Solid Films, Vol. 317, Iss. 1, 1998-04 ,pp. : 100-104

Elsevier

Access to resources Recommend Favorite

Anti-oxidation properties of TiAlN film prepared by plasma-assisted chemical vapor deposition and roles of Al

By Kim K.H. Kim C.W.

Thin Solid Films, Vol. 307, Iss. 1, 1997-10 ,pp. : 113-119

Elsevier

Access to resources Recommend Favorite