Fabrication and Characterization of ALD‐grown ZrO2:Ge Thin Films on Si(1 0 0) using CpZr(NMe2)3 and (NMe2)2Ge(ipr2en) Precursors with Ozone

Publisher： John Wiley & Sons Inc

E-ISSN： 1229-5949|36|8|2162-2165

ISSN： 1229-5949

Source： BULLETIN OF THE KOREAN CHEMICAL SOCIETY (ELECTRONIC), Vol.36, Iss.8, 2015-08, pp. : 2162-2165

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