Effect of the buffer layer on the metal–semiconductor–metal UV photodetector based on Al‐doped and undoped ZnO thin films with different device structures

Publisher： John Wiley & Sons Inc

E-ISSN： 1862-6319|212|8|1704-1712

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.8, 2015-08, pp. : 1704-1712

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