Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p‐GaN Gate AlGaN/GaN HEMTs

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PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 215, Iss. 2, 2018-01 ,pp. : n/a-n/a

John Wiley & Sons Inc

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An improved DC model for AlGaN/GaN HEMTs

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MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Vol. 57, Iss. 5, 2015-05 ,pp. : 1027-1029

John Wiley & Sons Inc

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Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN‐HEMTs with CMOS

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PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1145-1152

John Wiley & Sons Inc

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Suppression of current collapse in AlGaN/GaN MISHFET with carbon‐ doped GaN/undoped GaN multi‐layered buffer structure

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PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1116-1121

John Wiley & Sons Inc

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Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes

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PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1158-1161

John Wiley & Sons Inc

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