A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method

E-ISSN： 1862-6319|212|8|1685-1694

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.8, 2015-08, pp. : 1685-1694

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effects of high hydrogen dilution on the optical and electrical properties in B-doped nc-Si:H thin films

By Chen H. Gullanar M.H. Shen W.Z.

Journal of Crystal Growth, Vol. 260, Iss. 1, 2004-01 ,pp. : 91-101

Elsevier

Access to resources Recommend Favorite

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 249-252

Trans Tech Publications

Access to resources Recommend Favorite

Characteristics of electron traps in Si-doped Ga 0.51 In 0.49 P and electrical properties of modulation doped GaInP/InGaAs/GaAs heterostructures

By Besikci C. Civan Y.

Thin Solid Films, Vol. 338, Iss. 1, 1999-01 ,pp. : 213-219

Elsevier

Access to resources Recommend Favorite

Doping and electrical characteristics of in-situ heavily B-doped Si 1-x-y Ge x C y films epitaxially grown using ultraclean LPCVD

By Noda T. Lee D. Shim H. Sakuraba M. Matsuura T. Murota J.

Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. : 57-60

Elsevier

Access to resources Recommend Favorite

Study of electrical conduction in polypyrrole by varying the doping level

By Sutar D. Menon R. Subramanyam S.V.

Thin Solid Films, Vol. 417, Iss. 1, 2002-09 ,pp. : 40-42

Elsevier

Access to resources Recommend Favorite