Subband structure of p-type δ-doped GaAs as dependent on the acceptor concentration and the layer thickness

Author: Ozturk E.   Bahar M. K.   Sokmen I.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|41|3|195-200

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.41, Iss.3, 2008-03, pp. : 195-200

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Abstract