Characterization of metastable defects in hydrogen-implanted n-type silicon

Author: Sugiyama T.   Tokuda Y.   Kanazawa S.   Ishiko M.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|27|1-3|137-139

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 137-139

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