Distribution and properties of oxide precipitates in annealed nitrogen doped 300 mm Si wafers

Author: Akhmetov V. D.   Richter H.   Seifert W.   Lysytskiy O.   Wahlich R.   Müller T.   Reiche M.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|27|1-3|159-161

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 159-161

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Abstract