Detection and characterization of stacking faults by light beam induced current mapping and scanning infrared microscopy in silicon*

Author: Vève-Fossati C.   Martinuzzi S.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|3|2|123-126

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.3, Iss.2, 2010-03, pp. : 123-126

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract