Study of dislocations in strained-Si/Si_0.8Ge_0.2 heterostructures by EBIC, TEM and etching techniques

Author： Yuan X. L. Sekiguchi T. Ri S. G. Ito S.

E-ISSN： 1286-0050|27|1-3|337-340

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 337-340

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