Defect imaging in ultra-thin SiGe (100) strain relaxed buffers

By Werner J.   Lyutovich K.   Parry C. P.  

EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2011-02 ,pp. : 367-370

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Modelling of parasitic effects induced by electrically active defects in a SiGe HBT

By Lakhdara M.   Latreche S.   Gontrand C.  

EPJ Applied Physics (The), Vol. 43, Iss. 1, 2008-06 ,pp. : 55-63

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In-situ determination of the effective absorbance of thin μc-Si:H layers growing on rough ZnO:Al

By Meier Matthias   Bittkau Karsten   Paetzold Ulrich W.   Hüpkes Jürgen   Muthmann Stefan   Schmitz Ralf   Mück Andreas   Gordijn Aad  

EPJ Photovoltaics, Vol. 4, Iss. issue, 2013-10 ,pp. : 40602-40602

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Non-destructive optical methods for assessing defects in production of Si or SiGe materials

By Higgs V.   Laurent N.   Fellous C.   Dutarte D.  

EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 43-48

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Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures

By Horváth Zs. J.   Orlov L. K.   Rakovics V.   Ivina N. L.   Tóth A. L.   Demidov E. S.   Riesz F.   Vdovin V. I.   Pászti Z.  

EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 189-192

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