A multi-valley model for hot free-electron nonlinearities at 10.6 μm in highly doped n-GaAs

By Shkerdin G.   Stiens J.   Vounckx R.  

EPJ Applied Physics (The), Vol. 12, Iss. 3, 2010-03 ,pp. : 169-180

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Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping

By Künecke U.   Wellmann P. J.  

EPJ Applied Physics (The), Vol. 34, Iss. 3, 2006-06 ,pp. : 209-213

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Pyramidal defects in highly Mg-doped GaN: atomic structure and influence on optoelectronic properties

By Leroux M.   Vennéguès P.   Dalmasso S.   de Mierry P.   Lorenzini P.   Damilano B.   Beaumont B.   Gibart P.   Massies J.  

EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 259-262

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Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs

By Salviati G.   Rossi F.   Armani N.   Pavesi M.   Manfredi M.   Meneghesso G.   Zanoni E.   Castaldini A.   Cavallini A.  

EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 345-348

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Intersubband optical absorption in Si δ-doped GaAs for the donor distribution and thickness as dependent on the applied electric field

By Ozturk E.   Sokmen I.  

EPJ Applied Physics (The), Vol. 25, Iss. 1, 2003-11 ,pp. : 3-9

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