Pyramidal defects in highly Mg-doped GaN: atomic structure and influence on optoelectronic properties

Author： Leroux M.   Vennéguès P.   Dalmasso S.   de Mierry P.   Lorenzini P.   Damilano B.   Beaumont B.   Gibart P.   Massies J.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|27|1-3|259-262

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 259-262

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