Influence of an applied electric field on the electronic properties of Si δ-doped GaAs

Author： Ozturk E.   Ergun Y.   Sari H.   Sokmen I.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|24|3|189-194

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.24, Iss.3, 2003-10, pp. : 189-194

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Influence of temperature on the electronic properties of Si δ-doped GaAs structures

By Ozturk E.   Ergun Y.   Sari H.   Sokmen I.  

EPJ Applied Physics (The), Vol. 21, Iss. 2, 2002-11 ,pp. : 97-101

Edp Sciences

Access to resources Recommend Favorite

Intersubband optical absorption in Si δ-doped GaAs for the donor distribution and thickness as dependent on the applied electric field

By Ozturk E.   Sokmen I.  

EPJ Applied Physics (The), Vol. 25, Iss. 1, 2003-11 ,pp. : 3-9

Edp Sciences

Access to resources Recommend Favorite

Electronic properties of two coupled Si δ-doped GaAs structures

By Ozturk E.   Sari H.   Ergun Y.   Sokmen I.  

EPJ Applied Physics (The), Vol. 21, Iss. 2, 2002-11 ,pp. : 91-95

Edp Sciences

Access to resources Recommend Favorite

Interesting effects of the piezoelectric and internal electric fields on the band gap of InAs/GaAs/AlGaAs:δ-Si HEMTs

By Daoudi Mahmoud   Khalifa Najla   Dhifallah Ines   Ouerghi Abdelkarim  

EPJ Applied Physics (The), Vol. 66, Iss. 1, 2014-04 ,pp. : 10102-10102

Edp Sciences

Access to resources Recommend Favorite

Subband structure of p-type δ-doped GaAs as dependent on the acceptor concentration and the layer thickness

By Ozturk E.   Bahar M. K.   Sokmen I.  

EPJ Applied Physics (The), Vol. 41, Iss. 3, 2008-03 ,pp. : 195-200

Edp Sciences

Access to resources Recommend Favorite