Full characterization at 904 nm of large area Si p-n junction photodetectors produced by LID technique

Author： Ismail R. A. Abdulrazaq O. A. Hadi A. A. Hamadi O. A.

E-ISSN： 1286-0050|38|3|197-201

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.38, Iss.3, 2007-01, pp. : 197-201

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