Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping

Author： Künecke U.   Wellmann P. J.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|34|3|209-213

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.34, Iss.3, 2006-06, pp. : 209-213

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