Modeling of the spectral response of Al_xGa_1−xN p-n junctionphotodetectors

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Formation of Al_xGa_1−xSb films over GaSb substrates by Al diffusion

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High sensitivity of Franz-Keldysh oscillations in photoreflectance spectra for probing morphology in Al_xGa _1−xN/GaN heterostructures

By Takeuchi H.   Yamamoto Y.   Kamo Y.   Kunii T.   Oku T.   Wakaiki S.   Nakayama M.  

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Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy

By Aubry R.   Dua C.   Jacquet J.-C.   Lemaire F.   Galtier P.   Dessertenne B.   Cordier Y.   DiForte-Poisson M.-A.   Delage S. L.  

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Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors

By Aubry R.   Dua C.   Jacquet J.-C.   Lemaire F.   Galtier P.   Dessertenne B.   Cordier Y.   DiForte-Poisson M. -A.   Delage S. L.  

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