Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures

Author: Horváth Zs. J.   Orlov L. K.   Rakovics V.   Ivina N. L.   Tóth A. L.   Demidov E. S.   Riesz F.   Vdovin V. I.   Pászti Z.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|27|1-3|189-192

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 189-192

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract