Emphasis on trap activity in AlGaN/GaN HEMTs through temperature dependent pulsed I-V characteristics

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Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

By Qu Shenqi   Wang Xiaoliang   Xiao Hongling   Wang Cuimei   Jiang Lijuan   Feng Chun   Chen Hong   Yin Haibo   Peng Enchao   Kang He   Wang Zhanguo   Hou Xun  

EPJ Applied Physics (The), Vol. 66, Iss. 2, 2014-06 ,pp. : 20101-20101

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Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT

By Qu Shenqi   Wang Xiaoliang   Xiao Hongling   Wang Cuimei   Jiang Lijuan   Feng Chun   Chen Hong   Yin Haibo   Yan Junda   Peng Enchao   Kang He   Wang Zhanguo   Hou Xun  

EPJ Applied Physics (The), Vol. 68, Iss. 1, 2014-10 ,pp. : 10105-10105

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AlGaN/GaN MOS-HFETs based on InGaN/GaN MQW structures with Ta₂O₅ dielectric

By Lee K.H.   Chang P.C.   Chang S.J.   Yin Y.C.  

EPJ Applied Physics (The), Vol. 57, Iss. 3, 2012-03 ,pp. : 30102-30102

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Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates

By Ilgaz A.   Gökden S.   Tülek R.   Teke A.   Özçelik S.   Özbay E.  

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