Thermoelectric properties of Czochralski-grown silicon at high pressure up to 16 GPa

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EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 145-148

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Study of the defects in oxygen implanted silicon subjected to neutron irradiation and high pressure annealing

By Jung W.   Kaniewska M.   Misiuk A.   Londos C. A.  

EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 115-118

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Effect of high pressure-temperature on silicon layered structures as determined by X-ray diffraction and electron microscopy

By Bak-Misiuk J.   Misiuk A.   Ratajczak J.   Shalimov A.   Antonova I.   Trela J.  

EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 415-418

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Identification of hydrogen related defects in proton implanted float-zone silicon

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The study of strain and defects in high power laser diodes by spectroscopically resolved photoluminescence microscopy

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