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Springer Publishing Company

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Dual-gate AlGaN/GaN MIS-HEMTs using Si

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IOP Publishing

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Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

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Performance analysis of 20 nm gate-length In_0.2Al_0.8N/GaN HEMT with Cu-gate having a remarkable high I_ON/I_OFF ratio

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Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances

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