Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor

Author: Suntrup Donald J   Gupta Geetak   Li Haoran   Keller Stacia   Mishra Umesh K  

Publisher: IOP Publishing

E-ISSN: 1361-6641|30|10|105003-105006

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.30, Iss.10, 2015-10, pp. : 105003-105006

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Abstract