The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

Author: Nguyen Ngoc   McCall Briana   Alston Robert   Collis Ward   Iyer Shanthi  

Publisher: IOP Publishing

E-ISSN: 1361-6641|30|10|105004-105012

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.30, Iss.10, 2015-10, pp. : 105004-105012

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Abstract