High-temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs

Author: Wang Yun-Hsiang   Liang Yung C   Samudra Ganesh S   Chu Po-Ju   Liao Ya-Chu   Huang Chih-Fang   Kuo Wei-Hung   Lo Guo-Qiang  

Publisher: IOP Publishing

E-ISSN: 1361-6641|31|2|25004-25010

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.31, Iss.2, 2016-02, pp. : 25004-25010

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content