Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory

Author： Feng J.   Zhang Y.   Qiao B.W.   Lai Y.F.   Lin Y.Y.   Cai B.C.   Tang T.A.   Chen B.  

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.87, Iss.1, 2007-04, pp. : 57-62

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