Influence of excess Si distribution in the gate oxide on the memory characteristics of MOSFETs

Author： Wong J.I.   Chen T.P.   Yang M.   Liu Y.   Ng C.Y.   Ding L.   Chong C.F.   Tseng A.A.  

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.91, Iss.3, 2008-06, pp. : 411-413

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