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Chinese Physics B, Vol. 23, Iss. 9, 2014-09 ,pp. : 90702-90708

IOP Publishing

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Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress

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Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator

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Specific features of formation of radiation defects in the silicon layer in “silicon-on-insulator“ structures

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