Investigation of quantum size effect of laser induced CdS quantum dots in sulfonic group polyaniline (SPAn) film

By Ma X.   Shi W.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 153-158

Elsevier

Access to resources Recommend Favorite

Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique

By Wellmann P.   Schoenfeld W.   Garcia J.   Petroff P.  

Journal of Electronic Materials, Vol. 27, Iss. 9, 1998-09 ,pp. : 1030-1033

Springer Publishing Company

Access to resources Recommend Favorite

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

By Lu Q   Zhuang Q   Marshall A   Kesaria M   Beanland R   Krier A  

Semiconductor Science and Technology, Vol. 29, Iss. 7, 2014-07 ,pp. : 75011-75018

IOP Publishing

Access to resources Recommend Favorite

Electric field dependence of photocurrent absorption in GeSi/Si quantum wells

By Huang S.H.   Zhou H.   Jiang Z.M.   Lu F.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 136-141

Elsevier

Access to resources Recommend Favorite

Dependence of quantum dot photocurrent on the carrier escape nature in InAs/GaAs quantum dot solar cells

By Cedola Ariel   Cappelluti Federica   Gioannini Mariangela  

Semiconductor Science and Technology, Vol. 31, Iss. 2, 2016-02 ,pp. : 25018-25029

IOP Publishing

Access to resources Recommend Favorite