Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

Author: Zettler J K   Corfdir P   Geelhaar L   Riechert H   Brandt O   Fernández-Garrido S  

Publisher: IOP Publishing

E-ISSN: 1361-6528|26|44|445604-445612

ISSN: 0957-4484

Source: Nanotechnology, Vol.26, Iss.44, 2015-11, pp. : 445604-445612

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