Electrical Properties Evaluation on High Quality Hetero-Epitaxial 3C-SiC(001) for MOSFET Applications

E-ISSN： 1662-9752|2015|821|773-776

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 773-776

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Abstract

The effect of the crystal quality and surface morphology on the electrical properties of MOS capacitors has been studied in devices manufactured on 3C-SiC epitaxial layers grown on Silicon (100) substrate. The interface state density, which represents one of the most important parameters for the 3C-SiC MOSFET development, has been determined through capacitance measurements. A cross-correlation between High Resolution X-ray Diffraction, AFM analysis and electrical conductance measurements has allowed determining the relationship between the crystalline quality and the interface state density. By improving the crystalline quality, a decrease of the interface state density down to 10¹⁰ cm^-2 eV^-1 was observed.