Comparison of the Planar-JBS against the Trench-MOS Rectifier-Design Based on 4H-SiC for 3.3 kV Applications

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2015|821|604-607

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 604-607

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