Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2015|821|567-570

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 567-570

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 563-566

Trans Tech Publications

Access to resources Recommend Favorite

A Study of Post Annealing Effects in the Repair of High Resistance Failures with Unstable Schottky Barrier Height in 4H-SiC Schottky Barrier Diode

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 588-591

Trans Tech Publications

Access to resources Recommend Favorite

Optimum Design of 4H-SiC Junction Barrier Schottky Diode with Consideration of the Anisotropic Impact Ionization

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 745-748

Trans Tech Publications

Access to resources Recommend Favorite

Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 733-736

Trans Tech Publications

Access to resources Recommend Favorite

The Effect of Proton and Carbon Irradiation on 4H-SiC 1700V MPS Diode Characteristics

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 612-615

Trans Tech Publications

Access to resources Recommend Favorite