Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2015|821|541-544

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 541-544

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