Improving Interface Quality of 4H-SiC MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2015|821|484-487

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 484-487

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract