Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

E-ISSN： 1662-9752|2015|821|387-390

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 387-390

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 297-302

Trans Tech Publications

Access to resources Recommend Favorite

High-resolution observation of basal-plane C-core edge dislocations in 4H-SiC crystal by transmission electron microscopy

By Matsuhata Hirofumi

Philosophical Magazine, Vol. 92, Iss. 31, 2012-11 ,pp. : 3780-3788

Taylor & Francis Ltd

Access to resources Recommend Favorite

Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry

By Matsuhata Hirofumi

Philosophical Magazine, Vol. 92, Iss. 36, 2012-12 ,pp. : 4599-4617

Taylor & Francis Ltd

Access to resources Recommend Favorite

Basal Plane Dislocation Analysis of 4H-SiC Using Multi Directional STEM Observation

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 303-306

Trans Tech Publications

Access to resources Recommend Favorite

Effects of Basal Plane Dislocation Density in 4H-SiC Substrate on Degradation of Body-Diode Forward Voltage

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 384-388

Trans Tech Publications

Access to resources Recommend Favorite