Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 387-390

Trans Tech Publications

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High-resolution observation of basal-plane C-core edge dislocations in 4H-SiC crystal by transmission electron microscopy

By Matsuhata Hirofumi  

Philosophical Magazine, Vol. 92, Iss. 31, 2012-11 ,pp. : 3780-3788

Taylor & Francis Ltd

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Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry

By Matsuhata Hirofumi  

Philosophical Magazine, Vol. 92, Iss. 36, 2012-12 ,pp. : 4599-4617

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Direct observation of dislocations propagated from 4H-SiC substrate to epitaxial layer by X-ray topography

By Ohno T.   Yamaguchi H.   Kuroda S.   Kojima K.   Suzuki T.   Arai K.  

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Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor

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