Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2014|806|127-132

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2014, Iss.806, 2015-01, pp. : 127-132

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