Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2014|806|133-138
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2014, Iss.806, 2015-01, pp. : 133-138
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Influence of Phosphorus Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Effect of hydrogen ion implantation on the physical properties of SiO 2 /Si system
By Szekeres A. Alexandrova S. Paneva A.
Vacuum, Vol. 58, Iss. 2, 2000-08 ,pp. :
Study of the secondary-electron emission from thermally grown SiO 2 films on Si
By Yi W. Jeong T. Yu S. Lee J. Jin S. Heo J. Kim J.M.
Thin Solid Films, Vol. 397, Iss. 1, 2001-10 ,pp. :