Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2015|821|3-8
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 3-8
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Trials of Solution Growth of Dislocation-Free 4H-SiC Bulk Crystals
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Access to resources
Recommend
Solvent Design for High-Purity SiC Solution Growth
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Influence of Impurities in SiC Powder on High Quality SiC Crystal Growth
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Selective growth of high-quality 3C-SiC using a SiO 2 sacrificial-layer technique
By Eickhoff M. Moller H. Rapp M. Kroetz G.
Thin Solid Films, Vol. 345, Iss. 2, 1999-05 ,pp. :