Residual Stress Analysis of Indentation on 4H-SiC by Deep-Ultraviolet Excited Raman Spectroscopy

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2015|821|233-236

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 233-236

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Abstract