Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2015|821|153-156
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 153-156
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :