150 mm 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2015|821|153-156

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 153-156

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract