4.5-kV 20-mΩ.cm² Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension

E-ISSN： 1662-9752|2015|821|838-841

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 838-841

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