Bipolar resistive switching in BiFe_0.95Zn_0.05O₃ films

By Xue-Yong Yuan   Li-Rong Luo   Di Wu   Qing-Yu Xu  

Chinese Physics B, Vol. 22, Iss. 10, 2013-10 ,pp. : 107702-107707

IOP Publishing

Access to resources Recommend Favorite

BiFeO₃ single crystal as resistive switching element for application in microelectronic devices

By Markiewicz Ewa   Szot Krzysztof   Hilczer Bożena   Pietraszko Adam Andrzej  

Phase Transitions: A Multinational Journal, Vol. 86, Iss. 2-3, 2013-02 ,pp. : 284-289

Taylor & Francis Ltd

Access to resources Recommend Favorite

Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO (001) films

By Bo Hu   Wei He   Jun Ye   Jin Tang   Yong-Sheng Zhang   Xiang-Qun Zhang   Zhao-Hua Cheng   Bo Hu  

Chinese Physics B, Vol. 24, Iss. 7, 2015-07 ,pp. : 77502-77507

IOP Publishing

Access to resources Recommend Favorite

Determination of the magnetoelectric coupling coefficient from temperature dependences of the dielectric permittivity for multiferroic ceramics Bi₅Ti₃FeO₁₅

By Bartkowska J.   Dercz J.  

Journal of Experimental and Theoretical Physics, Vol. 117, Iss. 5, 2013-11 ,pp. : 875-878

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices

By Whitcher T J   Woon K L   Wong W S   Chanlek N   Nakajima H   Saisopa T   Songsiriritthigul P  

Journal of Physics D: Applied Physics, Vol. 49, Iss. 7, 2016-02 ,pp. : 75104-75110

IOP Publishing

Access to resources Recommend Favorite