Memory Devices: In Situ Tuning of Switching Window in a Gate‐Controlled Bilayer Graphene‐Electrode Resistive Memory Device (Adv. Mater. 47/2015)

Publisher： John Wiley & Sons Inc

E-ISSN： 1521-4095|27|47|7766-7766

ISSN： 0935-9648

Source： ADVANCED MATERIALS, Vol.27, Iss.47, 2015-12, pp. : 7766-7766

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