In Situ Tuning of Switching Window in a Gate‐Controlled Bilayer Graphene‐Electrode Resistive Memory Device

Publisher: John Wiley & Sons Inc

E-ISSN: 1521-4095|27|47|7767-7774

ISSN: 0935-9648

Source: ADVANCED MATERIALS, Vol.27, Iss.47, 2015-12, pp. : 7767-7774

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Abstract