InP Double Heterojunction Bipolar Transistor for broadband terahertz detection and imaging systems

E-ISSN： 1742-6596|647|1|151-154

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.647, Iss.1, 2015-10, pp. : 151-154

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-1155-Pr8-1161

Edp Sciences

Access to resources Recommend Favorite

Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

By Bin Niu Yuan Wang Wei Cheng Zi-Li Xie Hai-Yan Lu Long Chang Jun-Ling Xie

Chinese Physics Letters, Vol. 32, Iss. 7, 2015-07 ,pp. : 77304-77307

IOP Publishing

Access to resources Recommend Favorite

Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor

By Wang W-C. Pan H-J. Thei K-B. Lin K-W. Yu K-H. Cheng C-C. Cheng S-Y. Liu W-C.

Superlattices and Microstructures, Vol. 29, Iss. 5, 2001-05 ,pp. : 359-365

Academic Press

Access to resources Recommend Favorite

MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-1163-Pr8-1169

Edp Sciences

Access to resources Recommend Favorite