Multilayer MoS2 prepared by one-time and repeated chemical vapor depositions: anomalous Raman shifts and transistors with high ON/OFF ratio

Author： Wu Chong-Rong Chang Xiang-Rui Chang Shu-Wei Chang Chung-En Wu Chao-Hsin Lin Shih-Yen

Publisher： IOP Publishing

E-ISSN： 1361-6463|48|43|435101-435107

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.43, 2015-11, pp. : 435101-435107

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