Cryogenic etching of silicon with SF₆ inductively coupled plasmas: a combined modelling and experimental study

By Tinck Stefan   Tillocher Thomas   Dussart Rémi   Bogaerts Annemie  

Journal of Physics D: Applied Physics, Vol. 48, Iss. 15, 2015-04 ,pp. : 155204-155211

IOP Publishing

Access to resources Recommend Favorite

Vacuum ultra-violet emission of CF4 and CF3I containing plasmas and Their effect on low-k materials

By Otell Z el   Šamara V   Zotovich A   Hansen T   de Marneffe J-F   Baklanov M R  

Journal of Physics D: Applied Physics, Vol. 48, Iss. 39, 2015-10 ,pp. : 395202-395210

IOP Publishing

Access to resources Recommend Favorite

SF₆ and C₄F₈ global kinetic models coupled to sheath models

By Haidar Yehya   Pateau Amand   Rhallabi Ahmed   Mokrani Arezki   Taher Fadia   Roqueta Fabrice   Boufnichel Mohamed    

Plasma Sources Science and Technology, Vol. 23, Iss. 6, 2014-12 ,pp. : 65037-65051

IOP Publishing

Access to resources Recommend Favorite

Calculation of radiative properties of SF6–C2F4 thermal plasmas—application to radiative transfer in high-voltage circuit breakers modelling

By  

Journal of Physics D: Applied Physics, Vol. 47, Iss. 1, 2014-01 ,pp. : 15204-15217

IOP Publishing

Access to resources Recommend Favorite

Interaction of F atoms with SiOCH ultra low-k films. Part II: etching

By Rakhimova T V   Lopaev D V   Mankelevich Yu A   Kurchikov K A   Zyryanov S M   Palov A P   Proshina O V   Maslakov K I   Baklanov M R  

Journal of Physics D: Applied Physics, Vol. 48, Iss. 17, 2015-05 ,pp. : 175204-175217

IOP Publishing

Access to resources Recommend Favorite